Undoped Ge<inf>0.92</inf>Sn<inf>0.08</inf> quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si<inf>2</inf>H<inf>6</inf> passivation: High hole mobility and dependence of performance on orientation
Mingshan Liu(UK Dementia Research Institute), Yue Hao(Zhejiang Cancer Hospital), Yan Liu(Heilongjiang University), Chunfu Zhang(Xidian University), Hongjuan Wang(South China University of Technology), Xiangdong Li(Xidian University), Buwen Cheng(Chinese Academy of Sciences), Jincheng Zhang(Fudan University), Genquan Han(Xuzhou University of Technology)
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