Undoped Ge<inf>0.92</inf>Sn<inf>0.08</inf> quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si<inf>2</inf>H<inf>6</inf> passivation: High hole mobility and dependence of performance on orientation

Mingshan Liu, Yue Hao, Yan Liu et al.|Unknown|2014

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