Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
Sanghun Jeon(Samsung (South Korea)), Seung-Eon Ahn(Samsung (South Korea)), Ihun Song(Samsung (South Korea)), Chang Jung Kim(Samsung (South Korea)), U‐In Chung(Samsung (South Korea)), Eunha Lee(Samsung (South Korea)), Inkyung Yoo(Samsung (South Korea)), Arokia Nathan(University of Cambridge), Sungsik Lee(University College London), Khashayar Ghaffarzadeh(University College London), John Robertson(University of Cambridge), Kinam Kim(Samsung (South Korea))
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