Round-robin study of arsenic implant dose measurement in silicon by SIMS

David S. Simons(National Institute of Standards and Technology), Jae-Sun Won(Samsung (South Korea)), S. Yoshikawa(Panasonic (Japan)), Rabah Benbalagh(Cameca (France)), F. Toujou(Panasonic (Japan)), Brendan D. MacDonald, Takahiro Hasegawa(Toray Industries, Inc. (Japan)), Neil Montgomery(Cascade Technologies (United Kingdom)), J. Bennett(Engie (United States)), M. Tomita(Toshiba (Japan)), D. Gehre(Technische Universität Dresden), Richard M. Lindstrom(National Institute of Standards and Technology), C. J. Hitzman, M. Schuhmacher(Cameca (France)), Kiwoong Kim(Chungbuk National University), Jung Hwa Ko(Seoul National University Hospital), D. E. Sykes(Loughborough University), P. Peres(Cameca (France)), W. Stockwell, Paul Ronsheim(IBM (United States)), C. W. Magee(RCA (United States)), A. Chew(Loughborough University)
Applied Surface Science
May 5, 2006
Cited by 11


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