Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods

Pei Zhao(University of Florida), Jing Guo(University of Science and Technology of China)
Journal of Applied Physics
February 1, 2009
10.1063/1.3073875
Cited by 120

Related Papers

Ballistic carbon nanotube field-effect transistors
|Nature|2003|3.2k
One-Dimensional Electrical Contact to a Two-Dimensional Material
|Science|2013|3.1k
Atomically thin p–n junctions with van der Waals heterointerfaces
|Nature Nanotechnology|2014|2.3k
N-Doping of Graphene Through Electrothermal Reactions with Ammonia
|Science|2009|2.2k
Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors
|Physical Review Letters|2008|1.5k