Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si1−xGex layers
Jef Poortmans(IMEC), R. Van Overstraeten(IMEC), D. H. J. Totterdell(Ricardo AEA (United Kingdom)), S.C. Jain(IMEC), Matty Caymax(IMEC), R. Mertens(IMEC), J.F. Nijs(IMEC)
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