Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition
Haiou Li(Hong Kong University of Science and Technology), Tianwen Zhang(Harbin Institute of Technology), Chak Wah Tang(Hong Kong University of Science and Technology), Qi Li(Zhejiang Ocean University), Xi Jiang(Soochow University), Simin Li(State Grid Corporation of China (China)), Wei Huang(Innovation Team (China)), Kei May Lau(Hong Kong University of Science and Technology)
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