Nanometer metal-oxide-semiconductor field-effect transistors: A flexible tool for studying inversion layer physics

P. M. Mankiewich(AT&T (United States)), D. M. Tennant(University of Tennessee at Knoxville), L. D. Jackel, W. J. Skocpol(TKL Research), R. E. Howard

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

January 1, 1986

10.1116/1.583337

Cited by 16

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