Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

Can Wang(Chinese Academy of Sciences), Kui-juan Jin(Chinese Academy of Sciences), Zhongtang Xu(Chinese Academy of Sciences), Le Wang(Chinese Academy of Sciences), Chen Ge(Chinese Academy of Sciences), Huibin Lü(Chinese Academy of Sciences), Haizhong Guo(Chinese Academy of Sciences), Meng He(Chinese Academy of Sciences), Guozhen Yang(Chinese Academy of Sciences)
Applied Physics Letters
May 9, 2011
10.1063/1.3589814
Cited by 363

Abstract

Current-voltage hysteresis and switchable rectifying characteristics have been observed in epitaxial multiferroic BiFeO3 (BFO) thin films. The forward direction of the rectifying current can be reversed repeatedly with polarization switching, indicating a switchable diode effect and large ferroelectric resistive switching. With analyzing the potential barriers and their variation with ferroelectric switching at the interfaces between the metallic electrodes and the semiconducting BFO, the switchable diode effect can be explained qualitatively by the polarization-modulated Schottky-like barriers.

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