Photoconductivity in BiFeO3 thin films
S. Basu(Lawrence Berkeley National Laboratory), Lane W. Martin(Lawrence Berkeley National Laboratory), Ying‐Hao Chu(Lawrence Berkeley National Laboratory), M. Gajek(Lawrence Berkeley National Laboratory), R. Ramesh(Lawrence Berkeley National Laboratory), Ram Rai(University at Albany, State University of New York), Xiaoshan Xu(University of Tennessee at Knoxville), J. L. Musfeldt(University of Tennessee at Knoxville)
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Abstract
The optical properties of epitaxial BiFeO3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17eV, a direct gap (2.667±0.005eV at 300K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO3 films under illumination from a 100mW∕cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1Torr. Large increases in photoconductivity are observed in light.
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