Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics

Stefano Ambrogio(IBM Research - Almaden), Daniele Ielmini(Politecnico di Milano), Daniel C. Wang(Maxim Integrated (United States)), Vincent McCaffrey(Maxim Integrated (United States)), Simone Balatti
IEEE Transactions on Electron Devices
September 29, 2015
10.1109/ted.2015.2477135
Cited by 69

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