Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics

Stefano Ambrogio(IBM (United States)), Daniele Ielmini(Politecnico di Milano), Daniel C. Wang(Maxim Integrated (United States)), Vincent McCaffrey(Maxim Integrated (United States)), Simone Balatti
IEEE Transactions on Electron Devices
September 29, 2015
10.1109/ted.2015.2477135
Cited by 69

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