Charge-carrier localization induced by excess Fe in the superconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Fe</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>+</mml:mo><mml:mi>y</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Te</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Se</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>
T. J. Liu(Tulane University), Zhiqiang Mao(Pennsylvania State University), Minghu Fang(Collaborative Innovation Center of Advanced Microstructures), E. K. Vehstedt(Tulane University), P. Schiffer(Princeton University), Leonard Spînu(University of New Orleans), Jin Hu(Fuzhou University), Y. Liu(Pennsylvania State University), Bin Qian(Suzhou University of Technology), Xianglin Ke(University of Wisconsin–Madison), David Fobes(Tulane University), J. H. Yang(Zhejiang University), Huy Pham(University of New Orleans)
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