Voltage-Controlled Cycling Endurance of HfO<sub><italic>x</italic></sub>-Based Resistive-Switching Memory
Simone Balatti, Daniele Ielmini(Politecnico di Milano), Alessandro Calderoni(Micron (United States)), Stefano Ambrogio(IBM (United States)), Scott Sills(Micron (United States)), Nirmal Ramaswamy(Micron (United States)), Zhongqiang Wang
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