Voltage-Controlled Cycling Endurance of HfO<sub><italic>x</italic></sub>-Based Resistive-Switching Memory

Simone Balatti, Daniele Ielmini(Politecnico di Milano), Alessandro Calderoni(Micron (United States)), Stefano Ambrogio(IBM Research - Almaden), Scott Sills(Micron (United States)), Nirmal Ramaswamy(Micron (United States)), Zhongqiang Wang
IEEE Transactions on Electron Devices
August 14, 2015
10.1109/ted.2015.2463104
Cited by 104

Related Papers

Equivalent-accuracy accelerated neural-network training using analogue memory
|Nature|2018|1.1k
Recommended Methods to Study Resistive Switching Devices
|Advanced Electronic Materials|2018|649
Emerging neuromorphic devices
|Nanotechnology|2019|312
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM
|IEEE Transactions on Electron Devices|2016|250
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses
|Frontiers in Neuroscience|2016|246