InP/GaInAs composite collector heterostructure bipolar transistors and circuits
A. Feygenson(AT&T (United States)), D. Ritter(AT&T (United States)), R. A. Hamm(AT&T (United States)), R.D. Yadvish(AT&T (United States)), M. Haner(AT&T (United States)), M. B. Panish(AT&T (United States)), R.K. Montgomery(AT&T (United States)), P. R. Smith(AT&T (United States)), H. Temkin(Colorado State University)
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