High‐Performance 2D Rhenium Disulfide (ReS<sub>2</sub>) Transistors and Photodetectors by Oxygen Plasma TreatmentJaewoo Shim, Jin‐Hong Park, Young Jae Song et al.|Advanced Materials|2016Cited by 259
A High‐Performance WSe<sub>2</sub>/<i>h</i>‐BN Photodetector using a Triphenylphosphine (PPh<sub>3</sub>)‐Based n‐Doping TechniqueSeo‐Hyeon Jo, Jin‐Hong Park, Dong‐Ho Kang et al.|Advanced Materials|2016Cited by 167
Controllable Nondegenerate p-Type Doping of Tungsten Diselenide by OctadecyltrichlorosilaneDong‐Ho Kang, Jin‐Hong Park, Jaewoo Shim et al.|ACS Nano|2015Cited by 165
Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS<sub>2</sub>) through Thermal and Optical ActivationHyung‐Youl Park, Jin‐Hong Park, Myung-Hoon Lim et al.|ACS Nano|2015Cited by 63
Self-Assembled Layer (SAL)-Based Doping on Black Phosphorus (BP) Transistor and PhotodetectorDong‐Ho Kang, Jin‐Hong Park, Min Hwan Jeon et al.|ACS Photonics|2017Cited by 47