Sven Rühle

Abstract Quantum‐dot‐sensitized solar cells (QDSCs) are a promising low‐cost alternative to existing photovoltaic technologies such as crystalline silicon and thin inorganic films. The absorption spectrum of quantum dots (QDs) can be tailored by controlling their size, and QDs can be produced by low‐cost methods. Nanostructures such as mesoporous films, nanorods, nanowires, nanotubes and nanosheets with high microscopic surface area, redox electrolytes and solid‐state hole conductors are borrowed from standard dye‐sensitized solar cells (DSCs) to fabricate electron conductor/QD monolayer/hole conductor junctions with high optical absorbance. Herein we focus on recent developments in the field of mono‐ and polydisperse QDSCs. Stability issues are adressed, coating methods are presented, performance is reviewed and special emphasis is given to the importance of energy‐level alignment to increase the light to electric power conversion efficiency.

We review the status of the understanding of dye-sensitized solar cells (DSSC), emphasizing clear physical models with predictive power, and discuss them in terms of the chemical and electrical potential distributions in the device. Before doing so, we place the DSSC in the overall picture of photovoltaic energy converters, reiterating the fundamental common basis of all photovoltaic systems as well as their most important differences.

The onset wavelengths of the surface photovoltage (SPV) in dye-sensitized solar cells (DSSCs) with different mesoporous, wide-band gap electron conductor anode materials, viz., TiO2 (anatase), Nb2O5 (amorphous and crystalline), and SrTiO3, using the same Ru bis-bipyridyl dye for all experiments, are different. We find a clear dependence of these onset wavelengths on the conduction band edge energies (ECB) of these oxides. This is manifested in a blue-shift for cells with Nb2O5 and SrTiO3 compared to those with TiO2. The ECB levels of Nb2O5 and SrTiO3 are known to be some 200−250 meV closer to the vacuum level than that of our anatase films, while there is no significant difference between the optical absorption spectra of the dye on the various films. We, therefore, suggest that the blue shift is due to electron injection from excited-state dye levels above the LUMO into Nb2O5 and SrTiO3. Such injection comes about because, in contrast to what is the case for anatase, the LUMO of the adsorbed dye in the solution is below the ECB of these semiconductors, necessitating the involvement of higher vibrational and/or electronic levels of the dye, with the former being more likely than the latter. While for Nb2O5 hot electron injection has been proposed earlier, on the basis of flash photolysis experiments, this is the first evidence for such ballistic electron-transfer involving SrTiO3, a material very similar to anatase but with a significantly smaller electron affinity. Additional features in the SPV spectra of SrTiO3 and amorphous Nb2O5 (but not in those of crystalline Nb2O5) can be understood in terms of hole injection from the dye into the oxide via intraband gap surface states.