<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">YBa</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cu</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>7</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>(001) studied at 60 K with momentum-resolved inverse photoemissionT. J. Wagener, J. H. Weaver, Yongjun Hu et al.|Physical review. B, Condensed matter|1990Cited by 7
Electrovoltaic effects and symmetric band bending: Inverse photoemission of epitaxial Bi/GaAs(110) between 60 and 300 KYongjun Hu, J. H. Weaver, T. J. Wagener et al.|Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena|1990Cited by 6
Empty-electronic-state evolution for Sc and electron dynamics at the 3<i>p</i>-3<i>d</i>giant dipole resonanceYongjun Hu, J. H. Weaver, Yongli Gao et al.|Physical review. B, Condensed matter|1989Cited by 5
Surface and interface properties of high temperature superconductorsJ. H. Weaver, Yongjun Hu, Harry M. Meyer et al.|AIP conference proceedings|1989Cited by 2
Empty electronic states of epitaxial Bi overlayers on InP(110): Effects of surface relaxationMatej Jošt, J. H. Weaver, D. M. Poirier et al.|Journal of Vacuum Science & Technology A Vacuum Surfaces and Films|1991Cited by 2