Yong Hui Lee

CH3NH3PbX3 (MAPbX3) perovskites have attracted considerable attention as absorber materials for solar light harvesting, reaching solar to power conversion efficiencies above 20%. In spite of the rapid evolution of the efficiencies, the understanding of basic properties of these semiconductors is still ongoing. One phenomenon with so far unclear origin is the so-called hysteresis in the current-voltage characteristics of these solar cells. Here we investigate the origin of this phenomenon with a combined experimental and computational approach. Experimentally the activation energy for the hysteretic process is determined and compared with the computational results. First-principles simulations show that the timescale for MA(+) rotation excludes a MA-related ferroelectric effect as possible origin for the observed hysteresis. On the other hand, the computationally determined activation energies for halide ion (vacancy) migration are in excellent agreement with the experimentally determined values, suggesting that the migration of this species causes the observed hysteretic behaviour of these solar cells.

We report all solid-state nanostructured inorganic-organic heterojunction solar cells fabricated by depositing Sb(2)S(3) and poly(3-hexylthiophene) (P3HT) on the surface of a mesoporous TiO(2) layer, where Sb(2)S(3) acts as an absorbing semiconductor and P3HT acts as both a hole conductor and light absorber. These inorganic-organic light harvesters perform remarkably well with a maximum incident-photon-to-current efficiency (IPCE) of 80% and power conversion efficiency of 5.13% under air-mass 1.5 global (AM 1.5G) illumination with the intensity of 100 mW cm(-2). These devices are highly stable under room light in air, even without encapsulation. The present findings offer novel directions for achieving high-efficiency solid-state solar cells by hybridization of inorganic-organic light harvesters and hole transporters.

A stretchable polyaniline nanofiber temperature sensor array with an active matrix consisting of single-walled carbon nanotube thin-film transistors is demonstrated. The integrated temperature sensor array gives mechanical stability under biaxial stretching of 30%, and the resultant spatial temperature mapping does not show any mechanical or electrical degradation. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.