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N. Shibata

Bunkyo University

Publishes on Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Silicon Nanostructures and Photoluminescence. 84 papers and 1.9k citations.

84Publications
1.9kTotal Citations

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Top publicationsby citations

Robust atomic resolution imaging of light elements using scanning transmission electron microscopy
Scott D. Findlay, N. Shibata, Hidetaka Sawada et al.|Applied Physics Letters|2009
Cited by 377

We show that an annular detector placed within the bright field cone in scanning transmission electron microscopy allows direct imaging of light elements in crystals. In contrast to common high angle annular dark field imaging, both light and heavy atom columns are visible simultaneously. In contrast to common bright field imaging, the images are directly and robustly interpretable over a large range of thicknesses. We demonstrate this through systematic simulations and present a simple physical model to obtain some insight into the scattering dynamics.

New area detector for atomic-resolution scanning transmission electron microscopy
N. Shibata, Yuji Kohno, Scott D. Findlay et al.|Journal of Electron Microscopy|2010
Cited by 141

A new area detector for atomic-resolution scanning transmission electron microscopy (STEM) is developed and tested. The circular detector is divided into 16 segments which are individually optically coupled with photomultiplier tubes. Thus, 16 atomic-resolution STEM images which are sensitive to the spatial distribution of scattered electrons on the detector plane can be simultaneously obtained. This new detector can be potentially used not only for the simultaneous formation of common bright-field, low-angle annular dark-field and high-angle annular dark-field images, but also for the quantification of images by detecting the full range of scattered electrons and even for exploring novel atomic-resolution imaging modes by post-processing combination of the individual images.

Direct Imaging of Reconstructed Atoms on TiO <sub>2</sub> (110) Surfaces
N. Shibata, Akira Gotō, Si‐Young Choi et al.|Science|2008
Cited by 126

Determining the atomic structures of oxide surfaces is critical for understanding their physical and chemical properties but also challenging because the breaking of atomic bonds in the formation of the surface termination can involve complex reconstructions. We used advanced transmission electron microscopy to directly observe the atomic structure of reduced titania (TiO2) (110) surfaces from directions parallel to the surface. In our direct atomic-resolution images, reconstructed titanium atoms at the top surface layer are clearly imaged and are found to occupy the interstitial sites of the TiO2 structure. Combining observations from two orthogonal directions, the three-dimensional positioning of the Ti interstitials is identified at atomic dimensions and allows a resolution of two previous models that differ in their oxygen stoichiometries.

Selective synthesis of zigzag-type aligned carbon nanotubes on SiC (0 0 0 −1) wafers
M Kusunoki, Toshiyuki Suzuki, Chizuru Honjo et al.|Chemical Physics Letters|2002
Cited by 89Open Access

Zigzag-type carbon nanotubes have been selectively produced by surface decomposition of a well-polished SiC single crystal. The SiC wafer was heated to 1500 °C at a very small heating rate under vacuum. Transmission electron microscopy (TEM) and electron diffraction patterns revealed that almost all the well-aligned carbon nanotubes formed perpendicular to the SiC (0 0 0 −1) surface were double-walled and of zigzag type. The results of high-resolution electron microscopy (HREM) indicate that the zigzag type structure evolves from the Si–C hexagonal networks in the SiC crystal by the collapse of carbon layers remaining after the process of decomposition.