Growth process and morphology of three‐dimensional GaSb islands on Ga/Si(111)Shinsuke Hara, Hiroki I. Fujishiro, Katsumi Irokawa et al.|Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics|2013Cited by 12
Behavior of Ga atoms on Si(001) surface at high temperatureShinsuke Hara, Hiroki I. Fujishiro, Katsumi Irokawa et al.|Journal of Applied Physics|2005Cited by 9
Study of Initial Growth Layer of GaSb on Si(111) by Scanning Tunneling MicroscopyShinsuke Hara, Hiroki I. Fujishiro, Kazuhiro Fuse et al.|Japanese Journal of Applied Physics|2011Cited by 9
Study of Initial Growth Layer of GaSb on Si(111) by Scanning Tunneling MicroscopyShinsuke Hara, Hiroki I. Fujishiro, Akira Kawazu et al.|Japanese Journal of Applied Physics|2011Cited by 7