An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI DevicesJe-Min Hung, Meng‐Fan Chang, Chih-Cheng Hsieh et al.|2022 IEEE International Solid- State Circuits Conference (ISSCC)|2022Cited by 117
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge DevicesJe-Min Hung, Meng‐Fan Chang, Ren-Shuo Liu et al.|IEEE Journal of Solid-State Circuits|2022Cited by 60