An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI DevicesJe-Min Hung, Meng‐Fan Chang, Yu-Der Chih et al.|2022 IEEE International Solid- State Circuits Conference (ISSCC)|2022Cited by 117
Fusion of memristor and digital compute-in-memory processing for energy-efficient edge computingTai-Hao Wen, Meng‐Fan Chang, Chuan-Jia Jhang et al.|Science|2024Cited by 99
A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/WWei‐Hsing Huang, Meng‐Fan Chang, Chuan-Jia Jhang et al.|Unknown|2023Cited by 72
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge DevicesJe-Min Hung, Meng‐Fan Chang, Ren-Shuo Liu et al.|IEEE Journal of Solid-State Circuits|2022Cited by 60
A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge DevicesTai-Hao Wen, Meng‐Fan Chang, Ren-Shuo Liu et al.|Unknown|2023Cited by 17