Direct measurement of diffusion by hot tunneling microscopy: Activation energy, anisotropy, and long jumpsEric Ganz, J. A. Golovchenko, Silva K. Theiss et al.|Physical Review Letters|1992Cited by 209
Growth and morphology of Pb on Si(111)Eric Ganz, J. A. Golovchenko, Hwang Ing-Shouh et al.|Surface Science|1991Cited by 172
Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopySilva K. Theiss, J. A. Golovchenko, D. M. Chen|Applied Physics Letters|1995Cited by 44
Mobile Point Defects and Atomic Basis for Structural Transformations of a Crystal SurfaceIng‐Shouh Hwang, J. A. Golovchenko, Silva K. Theiss|Science|1994Cited by 29