Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memoriesLuis Miguel Prócel, Eddy Simoen, Vincenzo Maccaronio et al.|Journal of Applied Physics|2013Cited by 55
Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctionsLars‐Åke Ragnarsson, Marc Heyns, S. Severi et al.|IEEE Transactions on Electron Devices|2006Cited by 32