Heping Shen

The abundant reserve and low cost of sodium have provoked tremendous evolution of Na-ion batteries (SIBs) in the past few years, but their performances are still limited by either the specific capacity or rate capability. Attempts to pursue high rate ability with maintained high capacity in a single electrode remains even more challenging. Here, an elaborate self-branched 2D SnS2 (B-SnS2) nanoarray electrode is designed by a facile hot bath method for Na storage. This interesting electrode exhibits areal reversible capacity of ca. 3.7 mAh cm–2 (900 mAh g–1) and rate capability of 1.6 mAh cm–2 (400 mAh g–1) at 40 mA cm–2 (10 A g–1). Improved extrinsic pseudocapacitive contribution is demonstrated as the origin of fast kinetics of an alloying-based SnS2 electrode. Sodiation dynamics analysis based on first-principles calculations, ex-situ HRTEM, in situ impedance, and in situ Raman technologies verify the S-edge effect on the fast Na+ migration and reversible and sensitive structure evolution during high-rate charge/discharge. The excellent alloying-based pseudocapacitance and unsaturated edge effect enabled by self-branched surface nanoengineering could be a promising strategy for promoting development of SIBs with both high capacity and high rate response.

Rubidium (Rb) is explored as an alternative cation to use in a novel multication method with the formamidinium/methylammonium/cesium (Cs) system to obtain 1.73 eV bangap perovskite cells with negligible hysteresis and steady state efficiency as high as 17.4%. The study shows the beneficial effect of Rb in improving the crystallinity and suppressing defect migration in the perovskite material. The light stability of the cells examined under continuous illumination of 12 h is improved upon the addition of Cs and Rb. After several cycles of 12 h light–dark, the cell retains 90% of its initial efficiency. In parallel, sputtered transparent conducting oxide thin films are developed to be used as both rear and front transparent contacts on quartz substrate with less than 5% parasitic absorption of near infrared wavelengths. Using these developments, semi‐transparent perovskite cells are fabricated with steady state efficiency of up to 16.0% and excellent average transparency of ≈84% between 720 and 1100 nm. In a tandem configuration using a 23.9% silicon cell, 26.4% efficiency (10.4% from the silicon cell) in a mechanically stacked tandem configuration is demonstrated which is very close to the current record for a single junction silicon cell of 26.6%.

Abstract The performance of state‐of‐the‐art perovskite solar cells is currently limited by defect‐induced recombination at interfaces between the perovskite and the electron and hole transport layers. These defects, most likely undercoordinated Pb and halide ions, must either be removed or passivated if cell efficiencies are to approach their theoretical limit. In this work, a universal double‐side polymer passivation approach is introduced using ultrathin poly(methyl methacrylate) (PMMA) films. Very high‐efficiency (≈20.8%) perovskite cells with some of the highest open circuit voltages (1.22 V) reported for the same 1.6 eV bandgap are demonstrated. Photoluminescence imaging and transient spectroscopic measurements confirm a significant reduction in nonradiative recombination in the passivated cells, consistent with the voltage increase. Analysis of the molecular interactions between perovskite and PMMA reveals that the carbonyl (CO) groups on the PMMA are responsible for the excellent passivation via Lewis‐base electronic passivation of Pb 2+ ions. This work provides new insights and a compelling explanation of how PMMA passivation works, and suggests future directions for developing improved passivation layers.

Reducing interface recombination boosts the <italic>V</italic>_oc for perovskite solar cells.