Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopyMun Seok Jeong, H. J. Lee, Eun‐Kyung Suh et al.|Applied Physics Letters|2001Cited by 54
Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wellsMun Seok Jeong, H. J. Lee, C. S. Kim et al.|Applied Physics Letters|2001Cited by 39
Optical absorption and anomalous photoconductivity in undoped <i>n</i>-type GaNS. J. Chung, Bokyeong Kim, Mun Seok Jeong et al.|Applied Physics Letters|2000Cited by 32
Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LEDHyun Jeong, Mun Seok Jeong, Seung Yol Jeong et al.|Scientific Reports|2015Cited by 31
Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodesHyung Gu Kim, C. S. Hong, Hyun Kyu Kim et al.|Optics Letters|2010Cited by 15