The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)Yu‐Chih Sun, R. M. Biefeld, Sixuan Cheng et al.|Journal of Applied Physics|2005Cited by 22
Indium phosphide (001)-(2×1): Direct evidence for a hydrogen-stabilized surface reconstructionGang Chen, Robert F. Hicks, Sixuan Cheng et al.|Physical review. B, Condensed matter|2003Cited by 18
Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (001)-(2×4) surfaceR.L. Woo, Robert F. Hicks, Ujjal Das et al.|Surface Science|2006Cited by 9
Structure of ordered and disordered InxGa1−xP(001) surfaces prepared by metalorganic vapor phase epitaxySixuan Cheng, Robert F. Hicks, Yu‐Chih Sun et al.|Surface Science|2006Cited by 9
The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactorYu‐Chih Sun, Robert F. Hicks, Sixuan Cheng et al.|Journal of Applied Physics|2005Cited by 4