An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI DevicesJe-Min Hung, Meng‐Fan Chang, Win-San Khwa et al.|2022 IEEE International Solid- State Circuits Conference (ISSCC)|2022Cited by 117
A 40-nm, 2M-Cell, 8b-Precision, Hybrid SLC-MLC PCM Computing-in-Memory Macro with 20.5 - 65.0TOPS/W for Tiny-Al Edge DevicesWin-San Khwa, Meng‐Fan Chang, Chuan-Jia Jhang et al.|2022 IEEE International Solid- State Circuits Conference (ISSCC)|2022Cited by 117
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge DevicesJe-Min Hung, Meng‐Fan Chang, Ren-Shuo Liu et al.|IEEE Journal of Solid-State Circuits|2022Cited by 60