Domain Wall Creep in Epitaxial Ferroelectric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">P</mml:mi><mml:mi mathvariant="normal">b</mml:mi><mml:mo mathvariant="normal" stretchy="false">(</mml:mo><mml:mi mathvariant="normal">Z</mml:mi><mml:msub><mml:mi mathvariant="normal">r</mml:mi><mml:mn mathvariant="normal">0.2</mml:mn></mml:msub><mml:mi mathvariant="normal">T</mml:mi><mml:msub><mml:mi mathvariant="normal">i</mml:mi><mml:mn mathvariant="normal">0.8</mml:mn></mml:msub><mml:mo mathvariant="normal" stretchy="false">)</mml:mo><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn mathvariant="normal">3</mml:mn></mml:msub></mml:math>Thin FilmsThomas Tybell, Jean‐Marc Triscone, Thierry Giamarchi et al.|Physical Review Letters|2002Cited by 551
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Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr <sub>0.52</sub> Ti <sub>0.48</sub> )O <sub>3</sub> /SrRuO <sub>3</sub> HeterostructuresCharles Ahn, Jean‐Marc Triscone, L. Antognazza et al.|Science|1997Cited by 263
Nanoscale control of ferroelectric polarization and domain size in epitaxial Pb(Zr0.2Ti0.8)O3 thin filmsPatrycja Paruch, Jean‐Marc Triscone, Thomas Tybell|Applied Physics Letters|2001Cited by 199