Guizhou University
ORCID: 0000-0002-8590-1398Publishes on Silicon and Solar Cell Technologies, Thin-Film Transistor Technologies, Semiconductor materials and interfaces. 220 papers and 5k citations.
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Abstract Practical application of hard carbon materials in sodium‐ion batteries (SIBs) is largely limited by their low initial coulombic efficiency (ICE), which may be improved by increasing the graphitization degree. However, biomass‐derived hard carbon is usually nongraphitizable and extremely difficult to graphitize by direct heating even at 3000 °C. Herein, a general strategy is reported for fabricating hard carbon materials with graphite crystals at 1300 °C promoted by external graphite that serves as a crystal template for the growth of graphite crystals. The graphite crystals enable the contacted pseudographitic domains with a high‐level ordered structure, large domain size, and low defects, leading to an enhanced ICE. The obtained hard carbon materials with graphite crystals, using the carbonized eggshell membranes, and sucrose‐derived microsphere as precursors, achieve very high ICE of 89% and 91% with reversible capacity of 310 and 301 mA h g −1 , respectively. Therefore, using external graphite to promote high‐level ordering pseudographitic domains at low temperature is quite useful to improve ICE for SIB applications.
Novel-morphological Fe3O4 nanosheets with magnetochromatic property have been prepared by a modified solvothermal method. Such nanosheets could form one-dimension photonic crystal under an external magnetic field. The Fe3O4 nanosheets suspension could strongly diffract visible light and display varied colors with changing the intensity of the magnetic field. The photonic response is rapid, fully reversible and widely tunable in the entire visible spectrum. Excellent magnetic properties of these Fe3O4 nanosheets are exhibited with a high saturation magnetization (82.1 emu/g), low remanence (13.85 emu/g) and low coercive force (75.95 Oe). The amount of the solvent diethylene glycol (DEG) plays a key role in the formation of the sheet-shaped morphology. When the ratio of the DEG reaches 100%, the growing of the crystal plane (111) of Fe3O4 is inhibited and the sheet-like Fe3O4 crystals are formed.
Chronic wounds are one of the most serious complications of diabetes mellitus. Even though utilizing nitric oxide (NO) as a gas medicine to repair diabetic wounds presents a promising strategy, controlling the NO release behavior in the affected area, which is vital for NO-based therapy, still remains a significant challenge. In this work, a copper-based metal–organic framework, namely, HKUST-1, has been introduced as a NO-loading vehicle, and a NO sustained release system with the core–shell structure has been designed through the electrospinning method. The results show that the NO is quantificationally and stably loaded in the HKUST-1 particles, and the NO-loaded HKUST-1 particles are well incorporated into the core layer of the coaxial nanofiber. Therefore, NO can be controllably released with an average release rate of 1.74 nmol L–1 h–1 for more than 14 days. Moreover, the additional copper ions released from the degradable HKUST-1 play a synergistic role with NO to promote endothelial cell growth and significantly improve the angiogenesis, collagen deposition as well as anti-inflammatory property in the wound bed, which eventually accelerate the diabetic wound healing. These results suggest that such a copper-based metal–organic framework material as a controllable NO-releasing vehicle is a highly efficient therapy for diabetic wounds.
Abstract We present an industrial tunnel oxide passivated contacts (i‐TOPCon) bifacial crystalline silicon (c‐Si) solar cell based on large‐area n ‐type substrate. The interfacial thin SiO 2 is thermally growth and in situ capped by an intrinsic poly‐Si layer deposited by low‐pressure chemical vapor deposition (LPCVD). The intrinsic poly‐Si layer is doped in an industrial POCl 3 diffusion furnace to form the n + poly‐Si at the rear, which shows an excellent surface passivation characteristics with J 0 = 2.6 fA/cm 2 when passivated by a SiN x :H layer deposited by plasma‐enhanced chemical vapor deposition (PECVD). With an industrial fabrication process, the cells are manufactured with screen‐printed front and rear metallization, using large‐area 6‐in. n ‐type Czochralski (Cz) Si wafers. We demonstrate an average front‐side efficiency greater than 23% and an open‐circuit voltage V oc greater than 700 mV. These results are based on more than 20 000 pieces of cells from mass production on a single day, in an old conventional multicrystalline silicon (mc‐Si) Al‐back surface field (BSF) cell workshop, which has been upgraded to i‐TOPCon process. The best cell efficiency reaches 23.57%, as independently confirmed by Fraunhofer CalLab. A median module power greater than 345 W and a best module power greater than 355 W are demonstrated with double‐glass bifacial i‐TOPCon modules consisting of 120 pieces of half‐cut 161.7 mm pseudosquare i‐TOPCon cells with nine busbars.