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Peihao Huang

Northwestern Polytechnical University

ORCID: 0000-0002-9835-6667

Publishes on Quantum and electron transport phenomena, Organic Electronics and Photovoltaics, Conducting polymers and applications. 104 papers and 1.5k citations.

104Publications
1.5kTotal Citations

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Top publicationsby citations

Rational molecular and device design enables organic solar cells approaching 20% efficiency
Jiehao Fu, Qianguang Yang, Peihao Huang et al.|Nature Communications|2024
Cited by 296Open Access

For organic solar cells to be competitive, the light-absorbing molecules should simultaneously satisfy multiple key requirements, including weak-absorption charge transfer state, high dielectric constant, suitable surface energy, proper crystallinity, etc. However, the systematic design rule in molecules to achieve the abovementioned goals is rarely studied. In this work, guided by theoretical calculation, we present a rational design of non-fullerene acceptor o-BTP-eC9, with distinct photoelectric properties compared to benchmark BTP-eC9. o-BTP-eC9 based device has uplifted charge transfer state, therefore significantly reducing the energy loss by 41 meV and showing excellent power conversion efficiency of 18.7%. Moreover, the new guest acceptor o-BTP-eC9 has excellent miscibility, crystallinity, and energy level compatibility with BTP-eC9, which enables an efficiency of 19.9% (19.5% certified) in PM6:BTP-C9:o-BTP-eC9 based ternary system with enhanced operational stability.

Noisy intermediate-scale quantum computers
Bin Cheng, Xiu–Hao Deng, Xiu Gu et al.|Frontiers of Physics|2023
Cited by 120Open Access

Abstract Quantum computers have made extraordinary progress over the past decade, and significant milestones have been achieved along the path of pursuing universal fault-tolerant quantum computers. Quantum advantage, the tipping point heralding the quantum era, has been accomplished along with several waves of breakthroughs. Quantum hardware has become more integrated and architectural compared to its toddler days. The controlling precision of various physical systems is pushed beyond the fault-tolerant threshold. Meanwhile, quantum computation research has established a new norm by embracing industrialization and commercialization. The joint power of governments, private investors, and tech companies has significantly shaped a new vibrant environment that accelerates the development of this field, now at the beginning of the noisy intermediate-scale quantum era. Here, we first discuss the progress achieved in the field of quantum computation by reviewing the most important algorithms and advances in the most promising technical routes, and then summarizing the next-stage challenges. Furthermore, we illustrate our confidence that solid foundations have been built for the fault-tolerant quantum computer and our optimism that the emergence of quantum killer applications essential for human society shall happen in the future.

Spin relaxation in a Si quantum dot due to spin-valley mixing
Peihao Huang, Xuedong Hu|Physical Review B|2014
Cited by 71Open Access

We study the relaxation of an electron spin qubit in a Si quantum dot due to electrical noise. In particular, we clarify how the presence of conduction-band valleys influences spin relaxation. In single-valley semiconductor quantum dots, spin relaxation is through the mixing of spin and envelope orbital states via spin-orbit interaction. In Si, the relaxation could also be through the mixing of spin and valley states. We find that the additional spin relaxation channel, via spin-valley mixing and electrical noise, is indeed important for an electron spin in a Si quantum dot. By considering both spin-valley and intravalley spin-orbit mixings and Johnson noise in a Si device, we find that the spin relaxation rate peaks at the hot spot, where the Zeeman splitting matches the valley splitting. Furthermore, because of a weaker field dependence, the spin relaxation rate due to Johnson noise could dominate over phonon noise at low magnetic fields, which fits well with recent experiments.