Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor depositionJiun‐Yun Li, James C. Sturm, Chiao-Ti Huang et al.|Applied Physics Letters|2013Cited by 30
Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layerChiao-Ti Huang, James C. Sturm, Kevin Chou et al.|Applied Physics Letters|2014Cited by 20
The Effect of Germanium Fraction on High-Field Band-to-Band Tunneling in ${\rm p}^{+}$-SiGe/${\rm n}^{+}$-SiGe Junctions in Forward and Reverse BiasesJiun‐Yun Li, James C. Sturm|IEEE Transactions on Electron Devices|2013Cited by 11