Zheyuan Chen

Semiconductor-metal nanoheterostructures, such as CdSe/CdS dot-in-rod nanorods with a Pt tip at one end (or CdSe/CdS-Pt), are promising materials for solar-to-fuel conversion because they allow rational integration of a light absorber, hole acceptor, and electron acceptor or catalyst in an all-inorganic triadic heterostructure as well as systematic control of relative energetics and spatial arrangement of the functional components. To provide design principles of such triadic nanorods, we examined the photocatalytic H2 generation quantum efficiency and the rates of elementary charge separation and recombination steps of CdSe/CdS-Pt and CdS-Pt nanorods. We showed that the steady-state H2 generation quantum efficiencies (QEs) depended sensitively on the electron donors and the nanorods. Using ultrafast transient absorption spectroscopy, we determined that the electron transfer efficiencies to the Pt tip were near unity for both CdS and CdSe/CdS nanorods. Hole transfer rates to the electron donor, measured by time-resolved fluorescence decay, were positively correlated with the steady-state H2 generation QEs. These results suggest that hole transfer is a key efficiency-limiting step. These insights provide possible ways for optimizing the hole transfer step to achieve efficient solar-to-fuel conversion in semiconductor-metal nanostructures.

We demonstrate a photochemical reaction between graphene and benzoyl peroxide. This reaction introduces spatially localized defects into the graphene basal plane. The reactivity of the single-layer graphene is approximately 14 times higher than that of the double-layer graphene. Our result suggests that photoexcited graphene transfers a hot electron to benzoyl peroxide and induces its decomposition to a phenyl radical.

A tetra-nickel-containing polyoxotungstate, Na6K4[Ni4(H2O)2(PW9O34)2]·32H2O (Na6K4-Ni4P2), has been synthesized in high yield and systematically characterized. The X-ray crystal structure confirms that a tetra-nickel cluster core [Ni4O14] is sandwiched by two trivacant, heptadentate [PW9O34](9-) POM ligands. When coupled with (4,4'-di-tert-butyl-2,2'-dipyridyl)-bis(2-phenylpyridine(1H))-iridium(III) hexafluorophosphate [Ir(ppy)2(dtbbpy)][PF6] as photosensitizer and triethanolamine (TEOA) as sacrificial electron donor, the noble-metal-free complex Ni4P2 works as an efficient and robust molecular catalyst for H2 production upon visible light irradiation. Under minimally optimized conditions, Ni4P2 catalyzes H2 production over 1 week and achieves a turnover number (TON) of as high as 6500 with almost no loss in activity. Mechanistic studies (emission quenching, time-resolved fluorescence decay, and transient absorption spectroscopy) confirm that, under visible light irradiation, the excited state [Ir(ppy)2(dtbbpy)](+)* can be both oxidatively and reductively quenched by Ni4P2 and TEOA, respectively. Extensive stability studies (e.g., UV-vis absorption, FT-IR, mercury-poison test, dynamic light scattering (DLS) and transmission electron microscopy (TEM)) provide very strong evidence that Ni4P2 catalyst remains homogeneous and intact under turnover conditions.

Cadmium Sulfide (CdS) nanostructures have been widely applied for solar driven H2 generations due to its suitable band gap and band edge energetics. For an efficient photoreduction reaction, hole scavenging from CdS needs to compete favorably with many recombination processes. Extensive spectroscopic studies show evidence for hole trapping in CdS nanostructures, which naturally leads the concern of extracting trapped holes from CdS in photocatalytic reactions. Here, we report a study of hole transfer dynamics from colloidal CdS nanorods (NRs) to adsorbed hole acceptor, phenothiazine (PTZ), using transient absorption spectroscopy. We show that >99% of the holes were trapped (with a time constant of 0.73 ps) in free CdS NRs to form a photoinduced transient absorption (PA) feature. In the presence of PTZ, we observed the decay of the PA feature and corresponding formation of oxidized PTZ(+) radicals, providing direct spectroscopic evidence for trapped hole transfer from CdS. The trapped holes were extracted by PTZ in 3.8 ± 1.7 ns (half-life) to form long-lived charge separated states (CdS(-)-PTZ(+)) with a half lifetime of 310 ± 50 ns. This hole transfer time is significantly faster than the slow conduction band electron-trapped hole recombination (half lifetime of 67 ± 1 ns) in free CdS NRs, leading to an extraction efficiency of 94.7 ± 9.0%. Our results show that despite rapid hole trapping in CdS NRs, efficient extraction of trapped holes by electron donors and slow recombination of the resulting charge-separated states can still be achieved to enable efficient photoreduction using CdS nanocrystals.

Using Raman spectroscopy, we study the environmental sensitivity of mechanically exfoliated and electrically floating single-layer graphene transferred onto a hexagonal boron nitride (h-BN) substrate, in comparison with graphene deposited on a SiO(2) substrate. In order to understand and isolate the substrate effect on graphene electrical properties, we model and correct for Raman optical interference in the substrates. As-deposited and unannealed graphene shows a large I(2D)/I(G) ratio on both substrates, indicating extremely high quality, close to that of graphene suspended in vacuum. Thermal annealing strongly activates subsequent environmental sensitivity on the SiO(2) substrate; such activation is reduced but not eliminated on the h-BN substrate. In contrast, in a h-BN/graphene/h-BN sandwich structure, with graphene protected on both sides, graphene remains pristine despite thermal processing. Raman data provide a deeper understanding of the previously observed improved graphene electrical conductivity on h-BN substrates. In the sandwich structure, the graphene 2D Raman feature has a higher frequency and narrower line width than in pristine suspended graphene, implying that the local h-BN environment modestly yet measurably changes graphene electron and phonon dispersions.