Lei Pan

X-ray detection limit and sensitivity are important figure of merits for perovskite X-ray detectors, but literatures lack a valid mathematic expression for determining the lower limit of detection for a perovskite X-ray detector. In this work, we present a thorough analysis and new method for X-ray detection limit determination based on a statistical model that correlates the dark current and the X-ray induced photocurrent with the detection limit. The detection limit can be calculated through the measurement of dark current and sensitivity with an easy-to-follow practice. Alternatively, the detection limit may also be obtained by the measurement of dark current and photocurrent when repeatedly lowering the X-ray dose rate. While the material quality is critical, we show that the device architecture and working mode also have a significant influence on the sensitivity and the detection limit. Our work establishes a fair comparison metrics for material and detector development.

Spatially resolved electron field emission measurements from a nanocrystalline diamond film grown by plasma-enhanced chemical transport deposition have been obtained using a scanning probe apparatus with micrometer resolution. Macroscopic regions with a high emission site density, and turn-on fields below 3 V/μm, comprised approximately 1/2 of the total sample area. The emitting and the nonemitting regions of the specimen are differentiated distinctly by Raman spectra and subtly by morphologies. Both areas are largely sp3-bonded, but only the nonemitting regions exhibit a sharp line at 1332 cm−1, a well-known signature of diamond in larger crystallites.

Metal halide perovskites have arisen as a new family of semiconductors for radiation detectors due to their high stopping power, large and balanced electron–hole mobility-lifetime (<italic>μτ</italic>) product, and tunable bandgap.

Abstract Solution‐processed perovskites are promising for hard X‐ray and gamma‐ray detection, but there are limited reports on their performance under extremely intense X‐rays. Here, a solution‐grown all‐inorganic perovskite CsPbBr 3 single‐crystal semiconductor detector capable of operating at ultrahigh X‐ray flux of 10 10 photons s −1 mm −2 is reported. High‐quality solution‐grown CsPbBr 3 single crystals are fabricated into detectors with a Schottky diode structure of eutectic gallium indium/CsPbBr 3 /Au. A high reverse‐bias voltage of 1000 V (435 V mm − 1 ) can be applied with a small and stable dark current of ≈60–70 nA (≈9–10 nA mm − 2 ), which enables a high sensitivity larger than 10 000 µC Gy air −1 cm − 2 and a simultaneous low detection limit of 22 nGy air s − 1 . The CsPbBr 3 semiconductor detector shows an excellent photocurrent linearity and reproducibility under 58.61 keV synchrotron X‐rays with flux from 10 6 to 10 10 photons s − 1 mm − 2 . Defect characterization by thermally stimulated current spectroscopy shows a similar low defect density of a synchrotron X‐ray and a lab X‐ray irradiated device. Solid‐state nuclear magnetic resonance spectroscopy suggests that the excellent performance of the solution‐grown CsPbBr 3 single crystal may be associated with its good short‐range order, comparable to the spectrometer‐grade melt‐grown CsPbBr 3 .

Abstract Spectroscopic‐grade single crystal detectors can register the energies of individual X‐ray interactions enabling photon‐counting systems with superior resolution over traditional photoconductive X‐ray detection systems. Current technical challenges have limited the preparation of perovskite semiconductors for energy‐discrimination X‐ray photon‐counting detection. Here, this work reports the deployment of a spectroscopic‐grade CsPbBr 3 Schottky detector under reverse bias for continuum hard X‐ray detection in both the photocurrent and spectroscopic schemes. High surface barriers of ≈ 1 eV are formed by depositing solid bismuth and gold contacts. The spectroscopic response under a hard X‐ray source is assessed in resolving the characteristic X‐ray peak. The methodology in enhancing X‐ray sensitivity by controlling the X‐ray energies and flux, and voltage, is described. The X‐ray sensitivity varies between a few tens to over 8000 μC Gy air −1 cm −2 . The detectable dose rate of the CsPbBr 3 detectors is as low as 0.02 nGy air s −1 in the energy discrimination configuration. Finally, the unbiased CsPbBr 3 device forms a spontaneous contact potential difference of about 0.7 V enabling high quality of the CsPbBr 3 single crystals to operate in “passive” self‐powered X‐ray detection mode and the X‐ray sensitivity is estimated as 14 μC Gy air −1 cm −2 . The great potential of spectroscopic‐grade CsPbBr 3 devices for X‐ray photon‐counting systems is anticipated in this work.