Rakesh R. Pradhan

The performance of perovskite solar cells with inverted polarity (p-i-n) is still limited by recombination at their electron extraction interface, which also lowers the power conversion efficiency (PCE) of p-i-n perovskite-silicon tandem solar cells. A MgF x interlayer with thickness of ~1 nanometer at the perovskite/C 60 interface favorably adjusts the surface energy of the perovskite layer through thermal evaporation, which facilitates efficient electron extraction and displaces C 60 from the perovskite surface to mitigate nonradiative recombination. These effects enable a champion open-circuit voltage of 1.92 volts, an improved fill factor of 80.7%, and an independently certified stabilized PCE of 29.3% for a monolithic perovskite-silicon tandem solar cell ~1 square centimeter in area. The tandem retained ~95% of its initial performance after damp-heat testing (85°C at 85% relative humidity) for >1000 hours.

Reducing charge carrier transport losses, improving selectivity, and minimizing nonradiative recombination are essential for enhancing the efficiency and stability of perovskite/silicon tandem solar cells. We used a hybrid two-step perovskite deposition method that is compatible with industry-standard textured silicon, incorporating a perovskite surface treatment based on 1,3-diaminopropane dihydroiodide. The interaction of this molecule with the perovskite surface increased the majority charge carrier concentration at the electron-selective contact, which reduced interfacial recombination. Simultaneously, this field-effect passivation increased the electron concentration across the entire intrinsic perovskite absorber, which increased conductivity and reduced transport losses. Combined, this yields high-performance, fully textured perovskite/silicon tandem solar cells, achieving a 1-sun AM1.5G conversion efficiency of 33.1% with an open-circuit voltage of 2.01 volts and an extended outdoor stability in the Red Sea Coast.

Chalcogenide-based quantum dots are useful for the application of memory-switching devices because of the control in the trap states in the materials. The control in the trap states can be achieved using a hot-injection colloidal synthesis method that produces temperature-dependent size-variable quantum dots. In addition to this, formation of a nanoscale heterostructure with an insulating material adds to the charge-trapped switching mechanism. Here, we have shown that the colloidal monodispersed CdSe quantum dots and poly(4-vinylpyridine) (PVP) formed a nanoscale heterostructure between themselves when taken in a suitable ratio to fabricate a device. This heterostructure helps realize memory-switching in the device with a maximum on–off current ratio of 105. The switching in the device is mainly due to the trap states in the CdSe quantum dots. The conduction in the off state is due to thermal charge injection and space charge injection conduction and in the on state, due to the Ohmic conduction mechanism.

Abstract Effective charge carrier‐selective contacts are a crucial component of high‐performance crystalline silicon (c‐Si) solar cells. Organic materials deposited via self‐assembly on the c‐Si surface are promising candidates for simplified, scalable, and cost‐effective processing of charge extraction layers. This study investigates the application of n PACz self‐assembled monolayers (SAMs), based on carbazole and phosphonic acid groups, where n (= 2, 4, or 6) is the aliphatic chain length, to facilitate electron extraction in c‐Si solar cells by tuning the work function of aluminum (Al) at the rear contact. So far, these SAM molecules are mainly applied as the hole‐selective layer in state‐of‐the‐art perovskite and organic solar cells, via anchoring on a metal oxide electrode. Here, by inserting 2PACz between amorphous silicon passivated c‐Si and Al, an electron‐selective contact with a contact resistivity of 65 mΩ cm 2 is achieved and a power conversion efficiency of 21.4% with an open‐circuit voltage of 725 mV and a fill factor of 79.2% is demonstrated. Although the 2PACz displays some instability in this study, its initial performance is comparable to those achieved with conventionally used n‐type amorphous silicon. This study highlights the potential of solution‐processable organic SAMs in forming carrier‐selective contacts for c‐Si heterojunction solar cells.