Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDsShouqiang Lai, Tingzhu Wu, Zongming Lin et al.|IEEE Electron Device Letters|2023Cited by 24
Impacts of p-GaN layer thickness on the photoelectric and thermal performance of AlGaN-based deep-UV LEDsSaijun Li, Tingzhu Wu, Meng-Chun Shen et al.|Optics Express|2023Cited by 18
AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes With Varied Thickness of Sidewall Passivation via Atomic Layer DepositionKang-Wei Peng, Tingzhu Wu, Zhong Chen et al.|IEEE Transactions on Electron Devices|2023Cited by 8