Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n PhotodiodesJ.D. Brown, S. Krishnankutty, J. D. Benson et al.|MRS Internet Journal of Nitride Semiconductor Research|1999Cited by 60
Advantage of tapered and graded AlGaN electron blocking layer in InGaN‐based blue laser diodesWei Yang, Li Ding, Juan He|Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics|2013Cited by 16
Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emittersTongxing Yan, Juan He, Wei Yang et al.|physica status solidi (a)|2015Cited by 12
The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High InjectionsWenyu Cao, Shen Tihan, Qingbin Ji et al.|Chinese Physics Letters|2015Cited by 1