A transmission electron microscopy study of defects formed through the capping layer of self-assembled InAs∕GaAs quantum dot samplesK. Sears, C. Jagadish, J. Wong‐Leung et al.|Journal of Applied Physics|2006Cited by 35
The role of arsine in the self-assembled growth of InAs∕GaAs quantum dots by metal organic chemical vapor depositionK. Sears, C. Jagadish, Hark Hoe Tan et al.|Journal of Applied Physics|2006Cited by 16
Growth and Characterisation of InAs/GaAs Quantum Dots Grown by MOCVDK. Sears, C. Jagadish, J. Wong‐Leung et al.|Unknown|2006Cited by 7
InAs quantum dots grown on InGaAs buffer layers by metal–organic chemical vapor depositionK. Sears, C. Jagadish, J. Wong‐Leung et al.|Journal of Crystal Growth|2005Cited by 6