Tuning carrier type and density in Bi2Se3 by Ca-dopingZhiyong Wang, Jing Shi, Randy K. Dumas et al.|eScholarship (California Digital Library)|2010Cited by 70
Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>Se<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>3</mml:mn></mml:msub></mml:math>Peng Wei, Jing Shi, Xinfei Liu et al.|Physical Review B|2012Cited by 26
Tuning the Fermi level in Bi2Se3 bulk materials and transport devicesZhiyong Wang, Jing Shi, Peng Wei|Frontiers of Physics|2011Cited by 9
Erratum: “Tuning carrier type and density in Bi2Se3 by Ca-doping” [Appl. Phys. Lett. 97, 042112 (2010)]Zhiyong Wang, Jing Shi, Kai Liu et al.|Applied Physics Letters|2010Cited by 4