Ultra Low-Power SRAM Technology on High Performance FinFET Platform for HPC, Mobile, and High-Reliability Applications
Seong-Jin Park(Samsung (South Korea)), Ja-Hum Ku(Samsung (South Korea)), Jinkyu Lee(Samsung (South Korea)), Kyuwon Choi(Samsung (South Korea)), 강홍전(Samsung (South Korea)), A Ivaniukovich(Samsung (South Korea)), Hyun-jo Kim(Samsung (South Korea)), Jongho Lee(Seoul National University), Jinwoo Kim(Samsung (South Korea)), Young-Min Park(University of Michigan), Taejung Kim(Ulsan National Institute of Science and Technology), Hyungjin Kim(Samsung (South Korea)), J O Choi(Samsung (South Korea)), Dongjun Kim(Samsung (South Korea)), Hyojong Cho(Samsung (South Korea)), Sunghyuk Ha(Samsung (South Korea)), Jongjin Ro(Samsung (South Korea)), Dukho Hong(Samsung (South Korea)), Yohwan Park(Samsung (South Korea)), Youngjae Seo(Samsung (South Korea)), MinYong Jeong(Samsung (South Korea)), Jaehun Jeong(Samsung (South Korea)), Yuri Yasuda-Masuoka(Samsung (South Korea)), Jongki JUNG(Samsung (South Korea)), Ho Lee(Samsung (South Korea)), T I Kim(Samsung (South Korea))
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