Forward and reverse characteristics of 4H-SiC Schottky diodes with and without ion implantation and its temperature dependent properties
Zicheng Lu(Shandong University), Jisheng Han(Shandong University), Yi Cui(Kunming University of Science and Technology), Kuan Yew Cheong(Universiti Sains Malaysia), Lingling Lai(Shandong University), Fanpeng Zeng(Shandong University), Zhixin Liu(Shandong University)
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