Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO : Ga

哲征牧野, MASASHI KAWASAKI, T. Makino(University of Fukui), Shin Yoshida(Tohoku University), 勇三朗瀬川, 伸吉田, 雅司川崎, 明大友, Yusaburo Segawa, Atsushi Tsukazaki(Tohoku University), 敦塚崎, Akira Ohtomo(Tohoku University)

Institutional Repositories DataBase (IRDB)

August 1, 2004

Cited by 0

Related Papers

Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

|Nature Materials|2004|2.1k

Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films

|Applied Physics Letters|1998|1.8k

Mg x Zn 1−x O as a II–VI widegap semiconductor alloy

|Applied Physics Letters|1998|1.5k

Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature

|Solid State Communications|1997|975

An oxide-diluted magnetic semiconductor: Mn-doped ZnO

|Applied Physics Letters|1999|687