Influences of Zn flow rate and temperature on the defect state-related photoelectronic properties of MOCVD-grown ZnGa2O4
Jiamin Liu(Huazhong University of Science and Technology), Shiyuan Liu(University of Waterloo), Ian T. Ferguson(Kennesaw State University), Dong‐Sing Wuu(National Chung Hsing University), Qingxuan Li(Anhui University), Benjamin Klein(Kennesaw State University), Lingyu Wan(Guangxi University), Ray‐Hua Horng(Linköping University), Yao Liu(Sichuan Agricultural University), Chuanwei Zhang(Washington State University), Zhe Chuan Feng(Kennesaw State University), Manika Tun Nafisa(Kennesaw State University), Hao‐Hsiung Lin(National Taiwan University), Jeffrey Yiin(Kennesaw State University)
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