Gate‐Tunable Te‐WSe <sub>2</sub> Heterojunction Diodes for Polarization Detection and Logic Operation Application
Qixiao Zhao(Shanghai Institute of Technical Physics), Weida Hu(Shanghai Institute of Technical Physics), Xiaoyong Jiang(Shanghai Institute of Technical Physics), Luyao Guo(Shanghai Institute of Technical Physics), Jinshui Miao(Shanghai Institute of Technical Physics), Mengjia Xia(Shanghai Institute of Technical Physics), Fu Xiao(Chang'an University), Г. Н. Панин(Institute of Microelectronics Technology and High Purity Materials), C. G. Zhuang(Shanghai Institute of Technical Physics), Yihong She(Shanghai Institute of Technical Physics), Yueyue Fang(Shanghai Institute of Technical Physics), Bingkun Ye(Shanghai Institute of Technical Physics), Nengjie Huo(South China Normal University), Xinyu Ma(Shanghai Institute of Technical Physics), Tangxin Li(Shanghai Institute of Technical Physics), Hongyu Chen(Wrocław University of Environmental and Life Sciences), Mengyang Kang(Shanghai Institute of Technical Physics)
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