CBRAM based on CVD-grown MoSe2 with the coexistence of volatile and non-volatile resistive switching
Sanjay K. Banerjee(The University of Texas at Austin), Anupam Roy(Birla Institute of Technology, Mesra), S. S. Teja Nibhanupudi(The University of Texas at Austin), Ryan Schalip(The University of Texas at Austin), Jatin V. Singh(The University of Texas at Austin)
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