GaN cap impacts on gate leakage mechanisms in AlGaN/GaN high-electron mobility transistors
Beibei Lv(Zhejiang University), Jiongjiong Mo(Zhejiang University), Faxin Yu(Zhejiang University), Zhiyu Wang(Zhejiang University), Siyuan Ma(Guangxi University), Jiashun Lang(Zhejiang University)
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