High Performance P‐Channel Transistor Based on Amorphous Tellurium Trioxide
Seungho Bang(Institute for Basic Science), Mun Seok Jeong(Hanyang University), Dong‐Joon Yi(Dongguk University), Chaewon Lee(Hanyang University), Dae Young Park(Hanyang University), Dong Hyeon Kim(Ewha Womans University), Jungeun Song(Ulsan College), Dongwook Kim(Chonnam National University), Seok Joon Yun(Oak Ridge National Laboratory)
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