A 28nm 4Mb Embedded RRAM IP with Record-High Endurance of 10<sup>7</sup> Cycles and 10 Years@125°C Retention through Reliability-Enhanced Design-Technology Co-Optimization

Junyang Zhang(Tsinghua University), Huaqiang Wu(Beijing Advanced Sciences and Innovation Center), Lei Chen(Tsinghua University), Yue Xi(Tsinghua University), Xiangchao Ma(Tsinghua University), Kun Wang, He Qian(University of Science and Technology of China), Liyang Pan(Institute of Microelectronics), Yuyao Lu(Fraunhofer Institute for Integrated Circuits), Jianshi Tang(Tsinghua University), Dong Wu(Tsinghua University), Bin Gao(Chinese Academy of Sciences)
Unknown
December 7, 2024
Cited by 12


Related Papers