Impact of interface oxide type on the gamma radiation response of SiC TTL ICs
Alex Metreveli(KTH Royal Institute of Technology), Carl‐Mikael Zetterling(KTH Royal Institute of Technology), Vuong Van Cuong(Hiroshima University), Shin-Ichiro Kuroki(Hiroshima University), Kenichi Tanaka(Hiroshima University)
Cited by 4
Related Papers
500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC
|IEEE Electron Device Letters|2013|91
Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications
|IEEE Transactions on Electron Devices|2022|29
Mechanism of the photocatalytic activity of p-Si(100)/n-ZnO nanorods heterojunction
|Materials Chemistry and Physics|2017|22
High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications
|Thin Solid Films|2018|17