Stress-induced cracks in triangular defects of thick 4H-SiC homoepitaxial layers
Siqi Zhao(Chinese Academy of Sciences), Xingfang Liu(Institute of Semiconductors), Yunkai Li(China Agricultural University), Wanshun Zhao(Institute of Semiconductors), Lei Wang(Hunan University), Moyu Wei(Institute of Semiconductors), Jingyi Jiao(Institute of Semiconductors), Guoguo Yan(Chinese Academy of Sciences), Yicheng Pei(Institute of Semiconductors)
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